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Ultrathin SiO2 layer on atomically flat Si(111) surfaces with excellent electrical characteristics formed by nitric acid oxidation method

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4 Author(s)
Kim, Woo-Byoung ; Institute of Scientific and Industrial Research, Osaka University, and CREST, Japan Science and Technology Agency, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan ; Asuha, ; Matsumoto, Taketoshi ; Kobayashi, Hikaru

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We have developed a method of formation of atomically smooth Si/SiO2 interfaces by oxidation of atomically flat Si(111) surfaces by use of azeotropic nitric acid (HNO3) aqueous solutions (i.e., 68 wt % HNO3 at 121 °C). For the SiO2 layer on the atomically smooth Si substrates, the concentration of suboxide species, Si2+, is ∼50% of that on the rough Si substrates, and the valence band discontinuity is higher by ∼0.1 eV. In this case, the leakage current flowing through the ∼1.2 nm SiO2 is low, and further decreased by postmetallization annealing at 250 °C in hydrogen (e.g., 0.5 A/cm2 at VG=1 V).

Published in:

Applied Physics Letters  (Volume:93 ,  Issue: 7 )