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X-ray photoelectron spectroscopic study of Ge2Sb2Te5 etched by fluorocarbon inductively coupled plasmas

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8 Author(s)
Kang, S.-K. ; SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon, Gyeonggi-do 440-746, Republic of Korea ; Oh, J.S. ; Park, B.J. ; Kim, S.W.
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X-ray photoelectron spectroscopy was used to determine the level of surface fluorination damage of Ge2Sb2Te5 (GST) etched by fluorocarbon gases at different F/C ratios. When blank GST was etched, the gas with a higher F/C ratio produced a thinner C–F polymer on the etched surface but fluorinated Ge, Sb, and Te compounds were observed in the remaining GST. When the sidewall of the etched GST features was investigated, a thicker fluorinated layer was observed on the GST sidewall etched by the higher F/C ratio gas, indicating more fluorination due to the difficulty in preventing F diffusion into the GST through the thinner C–F layer.

Published in:

Applied Physics Letters  (Volume:93 ,  Issue: 4 )