By Topic

Enhanced light extraction efficiency from AlGaInP thin-film light-emitting diodes with photonic crystals

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
7 Author(s)
Bergenek, K. ; OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg, Germany ; Wiesmann, Ch. ; Wirth, R. ; O'Faolain, L.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2963030 

We investigate the use of photonic crystals for light extraction from high-brightness thin-film AlGaInP light-emitting diodes with different etch depths, lattice constants, and two types of lattices (hexagonal and Archimedean). Both simulations and experimental results show that the extraction of high order modes with a low effective index neff is most efficient. The highest external quantum efficiency without encapsulation is 19% with an Archimedean A7 lattice with reciprocal lattice constant G=1.5 k0, which is 47% better than an unstructured reference device.

Published in:

Applied Physics Letters  (Volume:93 ,  Issue: 4 )