By Topic

High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3/Ga2O3(Gd2O3) as gate dielectrics

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Lin, T.D. ; Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan ; Chiu, H.C. ; Chang, P. ; Tung, L.T.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors (MOSFETs) using ultrahigh-vacuum deposited Al2O3/Ga2O3(Gd2O3) (GGO) dual-layer dielectrics and a TiN metal gate were fabricated. For a In0.53Ga0.47As MOSFET using a gate dielectric of Al2O3(2 nm thick)/GGO(5 nm thick), a maximum drain current of 1.05 A/mm, a transconductance of 714 mS/mm, and a peak mobility of 1300 cm2/V s have been achieved, the highest ever reported for III-V inversion-channel devices of 1 μm gate length.

Published in:

Applied Physics Letters  (Volume:93 ,  Issue: 3 )