Electron-beam-induced current study of stacking faults and partial dislocations in 4H-SiC Schottky diode

Electrical properties of stacking faults and bounding partial dislocations in 4H-SiC Schottky diode were investigated by using electron-beam-induced current (EBIC) and cathodoluminescence (CL) techniques. EBIC images show that basal plane dislocation is easily dissociated into two partial dislocations [Si_(g) 30° and C_(g) 30° partials], with a stacking fault between them. The EBIC contrast of C_(g) 30° partial is always several percent higher than that of Si_(g) 30° partial. The stacking fault is brighter than the background, having the negative EBIC contrast. CL spectrum shows that a new peak (417 nm) appears at stacking fault position. The origin of bright stacking fault in EBIC image is discussed according to its quantum-well state.