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Flexible high gain complementary inverter using n-ZnO and p-pentacene channels on polyethersulfone substrate

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5 Author(s)
Min Suk Oh ; Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Republic of Korea ; Choi, Wonjun ; Kimoon Lee ; Hwang, D.K.
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We report on the fabrication of complementary inverters that have ZnO and pentacene as n-type and p-type channels on a polyethersulfone substrate operating under 7 V. Patterned Al and AlOx thin film were deposited at room temperature on the plastic as a common gate electrode and dielectric, respectively. After initial gate instability between ZnO channel and AlOx dielectric was controlled, our n-type thin-film transistors (TFTs) displayed quite a similar drain current level to that of p-type TFTs. Our flexible complementary device showed much high voltage gain of ∼100 even under a bent condition (56 mm radius of curvature). Our complementary inverter also demonstrates a promising dynamic behavior of ∼20 ms.

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Applied Physics Letters  (Volume:93 ,  Issue: 3 )