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Charge trapping induced current instability in pentacene thin film transistors: Trapping barrier and effect of surface treatment

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The current instability of pentacene thin film transistors is described by the energetic distribution of the barrier height for the trapping of mobile charges at the organic/insulator interface. The trapping energy was quantitatively analyzed by measuring the temperature dependence of current decay, which follows a stretched exponential function. The distribution of the barrier becomes higher and narrower by the use of a self assembled monolayer (SAM) on the insulator surface, whereas the pentacene film morphology has little influence on the trapping barriers. The increase in the barrier height in the SAM-treated device suppresses charge trapping, resulting in stable device operation.

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Applied Physics Letters  (Volume:93 ,  Issue: 3 )