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Origin of high mobility within an amorphous polymeric semiconductor: Space-charge-limited current and trap distribution

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7 Author(s)
Sung Chung, Dae ; Organic Electronics Laboratory, Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 790-784, Republic of Korea ; Lee, Dong Hoon ; Yang, Chanwoo ; Hong, Kipyo
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To elucidate the origin of the high field-effect mobility (≈0.02 cm2/V s) of amorphous poly[(1,2-bis-(2-thienyl)vinyl-5,5-diyl)-alt-(9,9-dioctyldecylfluorene-2,7-diyl], we investigated the current density–voltage (J-V) and mobility–voltage (μ-V) relationships as a function of temperature. By using the power law model and the Gaussian hopping model, we determined a characteristic trap energy of 67 meV, an energetic disorder parameter of 64 meV, and a total trap density of 2.5×1016 cm-3, comparable to that of poly(3-hexylthiophene). We conclude that the relatively low trap density, which originates from the grain-boundary-free amorphous nature of the semiconductor, enables this high field-effect mobility.

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Applied Physics Letters  (Volume:93 ,  Issue: 3 )