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Repeated epitaxial growth and transfer of arrays of patterned, vertically aligned, crystalline Si wires from a single Si(111) substrate

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6 Author(s)
Spurgeon, Joshua M. ; Beckman Institute and Kavli Nanoscience Institute, 1200 E. California Blvd., California Institute of Technology, Pasadena, California 91125, USA ; Plass, Katherine E. ; Kayes, B.M. ; Brunschwig, Bruce S.
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Multiple arrays of Si wires were sequentially grown and transferred into a flexible polymer film from a single Si(111) wafer. After growth from a patterned, oxide-coated substrate, the wires were embedded in a polymer and then mechanically separated from the substrate, preserving the array structure in the film. The wire stubs that remained were selectively etched from the Si(111) surface to regenerate the patterned substrate. Then the growth catalyst was electrodeposited into the holes in the patterned oxide. Cycling through this set of steps allowed regrowth and polymer film transfer of several wire arrays from a single Si wafer.

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Applied Physics Letters  (Volume:93 ,  Issue: 3 )