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Browse Journals & Magazines > Applied Physics Letters ...> Volume:93 Issue:3 Help

High-temperature annealing behavior of deep levels in 1 MeV electron irradiated p-type 6H-SiC

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2 Author(s)
Alfieri, Giovanni ; Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-katsura, Nishikyo, Kyoto 615-8510, Japan ; Kimoto, T.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2964184 

We report on the thermal stability of deep levels detected after 1 MeV electron irradiated p-type 6H-SiC. The investigation was performed by deep level transient spectroscopy, and an isochronal annealing series was carried out in the 373–2073 K temperature range. We found seven traps located between 0.23 and 1.3 eV above the valence band edge (EV). Two traps anneal out at temperatures below 1273 K, while the others display a high thermal stability up to 2073 K. The nature of the detected traps is discussed on the basis of their annealing behavior and previous data found in the literature.

Published in:
Applied Physics Letters  (Volume:93 ,  Issue: 3 )

Date of Publication: Jul 2008

Page(s):
032108 - 032108-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2964184
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Jul 2008

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