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Influence of the contact metal on the performance of n-type carbonyl-functionalized quaterthiophene organic thin-film transistors

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10 Author(s)
Schols, S. ; IMEC v.z.w., SOLO/PME, Kapeldreef 75, B-3001 Leuven, Belgium ; Van Willigenburg, L. ; Muller, R. ; Bode, D.
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Organic thin-film transistors using 5, 5-diperfluorohexylcarbonyl-2,2:5,2:5,2-quaterthiophene (DFHCO-4T) as the electron conducting organic semiconductor are fabricated and the performance of these transistors with different top-contact metals is investigated. Transistors with Au source-drain top contacts attain an apparent saturation mobility of 4.6 cm2/Vs, whereas this parameter is 100 times lower for similar transistors with Al/LiF top contacts. We explain this lower performance by the formation of a thin interfacial layer with poor charge injection properties resulting from a redox reaction between Al and DFHCO-4T.

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Applied Physics Letters  (Volume:93 ,  Issue: 26 )