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The surface contribution to the electrical transport properties of InN was directly measured and modulated by the electrolyte gated Hall effect. Undoped and Mg-doped films show different behaviors that can be effectively described by a multilayer model, taking into account the conduction contribution from both the surface and interface with the buffer layer. Gated photoluminescence experiments further show the surface accumulation layer enhances radiative electron-hole recombination in undoped InN.