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The surface contribution to the electrical transport properties of InN was directly measured and modulated by the electrolyte gated Hall effect. Undoped and Mg-doped films show different behaviors that can be effectively described by a multilayer model, taking into account the conduction contribution from both the surface and interface with the buffer layer. Gated photoluminescence experiments further show the surface accumulation layer enhances radiative electron-hole recombination in undoped InN.
Published in:
Applied Physics Letters
(Volume:93
,
Issue:
26
)
Date of Publication: Dec 2008
- Page(s):
- 262105 - 262105-3
- ISSN :
- 0003-6951
- Digital Object Identifier :
- 10.1063/1.3062856
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 18 June 2009
- Issue Date :
- Dec 2008
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