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Enhanced stimulated Raman scattering in silicon nanocrystals embedded in silicon-rich nitride/silicon superlattice structures

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7 Author(s)
Sirleto, L. ; Istituto per la Microelettronica e Microsistemi (IMM), Consiglio Nazionale delle Ricerche, Via P. Castellino 111, I-80131 Napoli, Italy ; Ferrara, M.A. ; Rendina, I. ; Basu, S.N.
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In this paper, we report on the observation of stimulated Raman scattering in amorphous silicon nanocrystals embedded in Si-rich nitride/silicon superlattice structures (SRN/Si-SLs). In particular, we have experimentally demonstrated amplification of Stokes signal up to 0.9 dB/cm at 1540.6 nm using a 1427 nm continuous-wavelength pump laser, consistent with a preliminary valuation of approximately a fourfold enhancement of the gain coefficient in Raman amplifier based on SRN/Si-SLs with respect to silicon. Finally, a significant reduction in threshold power of about 40% is also reported. Our findings indicate that silicon nanocrystals embedded in Si nitride-based superlattice structures show great promise for Si-based Raman lasers.

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Applied Physics Letters  (Volume:93 ,  Issue: 25 )