By Topic

Nonvolatile memory devices with high density ruthenium nanocrystals

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
5 Author(s)
Mao, Ping ; Institute of Microelectronics, Tsinghua University, Beijing 100084, People''s Republic of China and Tsinghua National Laboratory of Information Science and Technology, Beijing 100084, People''s Republic of China ; Zhang, Zhigang ; Pan, Liyang ; Jun Xu
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The nonvolatile memory transistor devices with embedded ruthenium (Ru) nanocrystals (NCs) are fabricated in a compatible way with conventional complementary metal-oxide semiconductor technology. The rapid thermal annealing for the whole gate stacks is used to form Ru NCs in pre-existed SiO2 matrix. Monocrystal Ru NCs with high density (3×1012 cm-2), small size (2–3 nm), and good uniformity both in spatial distribution and morphology are elaborated. A substantial memory window of 3.5 V is obtained and explained by the charging and effects of Ru NCs. The mechanisms of work function engineering are also discussed in this paper.

Published in:

Applied Physics Letters  (Volume:93 ,  Issue: 24 )