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Nonvolatile memory devices with high density ruthenium nanocrystals

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5 Author(s)
Mao, Ping ; Institute of Microelectronics, Tsinghua University, Beijing 100084, People''s Republic of China and Tsinghua National Laboratory of Information Science and Technology, Beijing 100084, People''s Republic of China ; Zhang, Zhigang ; Pan, Liyang ; Jun Xu
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The nonvolatile memory transistor devices with embedded ruthenium (Ru) nanocrystals (NCs) are fabricated in a compatible way with conventional complementary metal-oxide semiconductor technology. The rapid thermal annealing for the whole gate stacks is used to form Ru NCs in pre-existed SiO2 matrix. Monocrystal Ru NCs with high density (3×1012 cm-2), small size (2–3 nm), and good uniformity both in spatial distribution and morphology are elaborated. A substantial memory window of 3.5 V is obtained and explained by the charging and effects of Ru NCs. The mechanisms of work function engineering are also discussed in this paper.

Published in:

Applied Physics Letters  (Volume:93 ,  Issue: 24 )