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Browse Journals & Magazines > Applied Physics Letters ...> Volume:93 Issue:23 Help

Power dissipation spectra and terahertz intervalley transfer gain in bulk GaAs under high electric fields

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6 Author(s)
Zhu, Y.M. ; Institute of Industrial Science and INQIE, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan ; Unuma, T. ; Shibata, K. ; Hirakawa, K.
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We have investigated terahertz radiation emitted from electrons photoexcited by femtosecond laser pulses in bulk GaAs under strong bias electric fields. Power dissipation spectra of electrons for step-function-like input electric fields have been obtained by calculating Fourier spectra of the measured terahertz traces. The cutoff frequency νc for negative power dissipation (i.e., gain) due to intervalley transfer is found to gradually increase with increasing electric fields below 50 kV/cm and saturate at ∼1 THz above 50 kV/cm at 300 K. From the temperature dependence of νc, it is found that νc is governed by the emission of optical phonons.

Published in:
Applied Physics Letters  (Volume:93 ,  Issue: 23 )

Date of Publication: Dec 2008

Page(s):
232102 - 232102-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.3039069
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Dec 2008

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