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Dynamic bias stress current instability caused by charge trapping and detrapping in pentacene thin film transistors

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4 Author(s)
Miyadera, T. ; Nanotechnology Research Institute, AIST, Tsukuba, Ibaraki 305-8562, Japan ; Minari, T. ; Wang, S.D. ; Tsukagoshi, K.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3037213 

The current instability in pentacene organic thin film transistors (OTFTs) under dynamic bias stress was investigated. Current instability is strongly influenced by pulse duty ratio and pulse on-period and off-period voltages, but is independent of pulse frequency. A stable on-current without current instability was achieved by controlling the pulse duty ratio and pulse voltage. On the basis of the experimental results, a reversible transition model of dynamic charge trapping and detrapping in pentacene OTFTs is proposed, and trapping and detrapping time constants were estimated.

Published in:

Applied Physics Letters  (Volume:93 ,  Issue: 21 )

Date of Publication:

Nov 2008

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