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Browse Journals & Magazines > Applied Physics Letters ...> Volume:93 Issue:20 Help

Comparison of the effects of Ar and H2 plasmas on the performance of homojunctioned amorphous indium gallium zinc oxide thin film transistors

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5 Author(s)
Ahn, Byung Du ; School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Republic of Korea ; Shin, Hyun Soo ; Hyun Jae Kim ; Park, Jin-Seong
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We proposed a homojunctioned amorphous InGaZnO (a-IGZO) thin film transistor (TFT) and compared its performance to that of a conventional structured TFT. The source/drain regions were formed in the a-IGZO channel layer using Ar and H2 plasma treatments, respectively. Hydrogen itself was found to act as a carrier of donors with H2 plasma treatment, which had effects to a depth of 50 nm. Our TFT had a field-effect mobility of 7.27 cm2/V s, an on/off ratio of 1.2×107, a threshold voltage of 0.96 V, and a subthreshold swing of 0.49 V/decade.

Published in:
Applied Physics Letters  (Volume:93 ,  Issue: 20 )

Date of Publication: Nov 2008

Page(s):
203506 - 203506-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.3028340
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Nov 2008

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