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Browse Journals & Magazines > Applied Physics Letters ...> Volume:93 Issue:20 Help

GaAs/AlGaAs quantum dot laser fabricated on GaAs (311)A substrate by droplet epitaxy

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6 Author(s)
Mano, T. ; Quantum Dot Research Center, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan ; Kuroda, T. ; Mitsuishi, K. ; Nakayama, Y.
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We have demonstrated photopumped laser action of self-assembled GaAs/AlGaAs quantum dots (QDs) grown on GaAs (311)A substrate by droplet epitaxy. Due to the short migration distance of Ga adatoms across the (311)A surface, high-density QDs were created with high uniformity. The QDs exhibited a narrow spectral band of intense photoluminescence from the QD ensemble, reflecting their small size distribution and high quality. Using the QDs on the (311)A surface as an active laser medium, we observed multimodal stimulated emissions at temperatures of up to 300 K.

Published in:
Applied Physics Letters  (Volume:93 ,  Issue: 20 )

Date of Publication: Nov 2008

Page(s):
203110 - 203110-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.3026174
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Nov 2008

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