By Topic

Role of field enhanced mechanisms and impact ionization on the threshold voltage of short channel polycrystalline silicon thin film transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Gaucci, P. ; IMM-CNR, Via del Fosso del Cavaliere 100, 00133 Roma, Italy ; Valletta, A. ; Mariucci, L. ; Pecora, A.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Drain bias induced threshold voltage variation in short channel polycrystalline silicon (polysilicon) thin-film transistors (TFTs) are investigated, combining experimental measurements and two-dimensional numerical simulations. We show that drain induced barrier lowering and floating body effects, induced by impact ionization, are the main causes of such variations. Field enhanced mechanisms, causing leakage current, tend to mitigate the effect of impact ionization, since they provide an enhanced recombination rate in the high field region. This result is in contrast to what is suggested for silicon-on-insulator devices and also applied to polysilicon TFTs, where leakage current is assumed to contribute to floating body effects.

Published in:

Applied Physics Letters  (Volume:93 ,  Issue: 19 )