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Effects of background oxygen pressure on dielectric and ferroelectric properties of epitaxial (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.10,Sb0.06)O3 thin films on SrTiO3

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3 Author(s)
Abazari, M. ; The Glenn Howatt Electronic Ceramics Laboratory, Department of Materials Science and Engineering, Rutgers-The State University of New Jersey, Piscataway, New Jersey 08854, USA ; Akdogan, E.K. ; Safari, A.

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Oxygen partial pressure (PO2) in pulsed laser deposition significantly influences the composition, microstructure, and electrical properties of epitaxial misfit strain-relieved 450 nm <001> oriented epitaxial (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.10,Sb0.06)O3 thin films on SrRuO3 coated SrTiO3. Films deposited at 400 mTorr exhibit high remnant and saturated polarization of 7.5 and 16.5 μC/cm2, respectively, which is ∼100% increase over the ones grown at 100 mTorr. The dielectric constant linearly increases from 220 to 450 with increasing PO2. The observed changes in surface morphology of the films and their properties are shown to be due to the suppression of volatile A-site cation loss.

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Applied Physics Letters  (Volume:93 ,  Issue: 19 )