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Effect of dislocations on electrical and optical properties of n-type Al0.34Ga0.66N

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9 Author(s)
Chen, K.X. ; Department of Physics, Applied Physics, and Astronomy, Future Chips Constellation, Rensselaer Polytechnic Institute, Troy, New York 12180, USA ; Dai, Q. ; Lee, W. ; Kim, J.K.
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The effect of edge and screw dislocations on the electrical and optical properties of n-type Al0.34Ga0.66N is investigated. It is found that edge dislocations strongly affect the electrical properties of n-type Al0.34Ga0.66N. Both free carrier concentration and mobility decrease with increasing edge dislocation density. Edge dislocations also enhance nonradiative recombination, which is indicated by decreasing near-band-edge UV as well as parasitic blue photoluminescence. The UV/blue ratio is found to be independent of the edge dislocation density but strongly depends on the Si doping concentration.

Published in:

Applied Physics Letters  (Volume:93 ,  Issue: 19 )

Date of Publication:

Nov 2008

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