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Browse Journals & Magazines > Applied Physics Letters ...> Volume:93 Issue:19 Help

Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing

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5 Author(s)
Nomura, K. ; ERATO-SORST, JST, in Frontier Research Center, Mail Box S2-13, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan ; Kamiya, Toshio ; Ohta, Hiromichi ; Hirano, Masahiro
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Roles of H2O addition to an annealing atmosphere were investigated for amorphous In–Ga–Zn–O thin-film transistors fabricated at room temperature. Although dry O2 annealing improved saturation mobility (μsat) and subthreshold voltage swings (S), wet O2 annealing further improved them to μsat∼12 cm2(V s)-1 and S≪0.12 V  decade-1 along with improvement of their uniformity. Desorption of OH-related species caused conductivity increase during thermal annealing at ≪310 °C. Zn–O components started to desorb at ∼300 °C for the unannealed and the dry O2 annealed films, while these were suppressed remarkably by the wet O2 annealing.

Published in:
Applied Physics Letters  (Volume:93 ,  Issue: 19 )

Date of Publication: Nov 2008

Page(s):
192107 - 192107-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.3020714
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Nov 2008

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