Quantum-dot (QD) light-emitting diodes (LEDs) are demonstrated on Si wafers by embedding core-shell CdSe/ZnS nanocrystals in TiO2 thin films via plasma-enhanced metallorganic chemical vapor deposition. The n-TiO2/QDs/p-Si LED devices show typical p-n diode current-voltage and efficient electroluminescence characteristics, which are critically affected by the removal of QD surface ligands. The TiO2/QDs/Si system we presented can offer promising Si-based optoelectronic and electronic device applications utilizing numerous nanocrystals synthesized by colloidal solution chemistry.
Published in:
Applied Physics Letters
(Volume:93
,
Issue:
19
)
Date of Publication:
Nov 2008
- Page(s):
-
191116
-
191116-3
- ISSN :
-
0003-6951
- Digital Object Identifier :
-
10.1063/1.3028070
- Product Type:
-
Journals & Magazines
- Date of Current Version :
-
18 June 2009
- Issue Date :
-
Nov 2008