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Quantum-dot light-emitting diodes utilizing CdSe/ZnS nanocrystals embedded in TiO2 thin film

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6 Author(s)
Kang, Seung-Hee ; Department of Materials Science & Engineering, Chungnam National University, Daeduk Science Town, Daejeon 305-764, Republic of Korea ; Kumar, Ch.Kiran ; Lee, Zonghoon ; Kim, Kyung-Hyun
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3028070 

Quantum-dot (QD) light-emitting diodes (LEDs) are demonstrated on Si wafers by embedding core-shell CdSe/ZnS nanocrystals in TiO2 thin films via plasma-enhanced metallorganic chemical vapor deposition. The n-TiO2/QDs/p-Si LED devices show typical p-n diode current-voltage and efficient electroluminescence characteristics, which are critically affected by the removal of QD surface ligands. The TiO2/QDs/Si system we presented can offer promising Si-based optoelectronic and electronic device applications utilizing numerous nanocrystals synthesized by colloidal solution chemistry.

Published in:
Applied Physics Letters  (Volume:93 ,  Issue: 19 )

Date of Publication: Nov 2008

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