By Topic

The effect of injector barrier thickness and doping level on current transport and optical transition width in a λ∼8.0 μm quantum cascade structure

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Howard, S.S. ; Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA ; Howard, D.P. ; Franz, Kale ; Hoffman, Anthony
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We experimentally study the optical transition width and current transport properties of a set of λ∼8.0 μm quantum cascade (QC) structures with varying injector barrier thickness and doping level. For this high-performance QC laser structure, a 50% reduction in doping level and a 33% reduction in injection barrier thickness yield five times stronger luminescence, 20% smaller optical transition linewidth, and improved current-voltage characteristics. These results demonstrate how high-performance QC laser structures can be engineered to produce narrow gain spectra at and above room temperature.

Published in:

Applied Physics Letters  (Volume:93 ,  Issue: 19 )