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Metal-oxide-high-k-oxide-silicon memory structure using an Yb2O3 charge trapping layer

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2 Author(s)
Pan, Tung-Ming ; Department of Electronics Engineering, Chang Gung University, Taoyuan 333, Taiwan ; Jing-Wei Chen

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In this letter, we proposed a metal-oxide-high-k-oxide-silicon (MOHOS)-type memory structure using a high-k Yb2O3 charge trapping layer for flash memory applications. When using Fowler-Nordheim for charging and discharging, the high-k Yb2O3 MOHOS-type memories that had been annealed at 800 °C exhibited large threshold voltage shifting (memory window of ∼2.2 V) and excellent data retention (charge loss of ∼6% measured time up to 104 s and at room temperature) because of the higher probability for trapping the charge carrier due to the formation of the Yb-silicate layer and the smooth surface roughness.

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Applied Physics Letters  (Volume:93 ,  Issue: 18 )