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An improved active region concept for highly efficient GaSb-based optically in-well pumped vertical-external-cavity surface-emitting lasers

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7 Author(s)
Schulz, Nicola ; Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg, Germany ; Rosener, B. ; Moser, Rudiger ; Rattunde, M.
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An improved active region concept for GaSb-based optically pumped vertical-external-cavity surface-emitting lasers (VECSELs) is presented. The concept is based on GaxIn1-xAsySb1-y quantum wells embedded between AlAsySb1-y barrier layers designed for optical in-well pumping. Advantages of this concept are a high modal gain, the suppression of thermal leakage currents, and an improved thermal conductivity of the active region compared to a conventional GaInAsSb/AlGaAsSb active region design. An in-well pumped VECSEL emitting at 2.24 μm has been realized according to this concept, yielding at a heatsink temperature of 20 °C in continuous-wave operation a power slope efficiency of more than 32% and an absorption of the 1.96 μm pump light of more than 50% without pump recycling.

Published in:

Applied Physics Letters  (Volume:93 ,  Issue: 18 )

Date of Publication:

Nov 2008

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