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Metal modulation epitaxy growth for extremely high hole concentrations above 1019 cm-3 in GaN

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6 Author(s)
Namkoong, Gon ; Applied Research Center, Old Dominion University, Newport News, Virginia 23606, USA ; Trybus, E. ; Lee, Kyung Keun ; Moseley, Michael
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3005640 

The free hole carriers in GaN have been limited to concentrations in the low 1018 cm-3 range due to the deep activation energy, lower solubility, and compensation from defects, therefore, limiting doping efficiency to about 1%. Herein, we report an enhanced doping efficiency up to ∼10% in GaN by a periodic doping, metal modulation epitaxy growth technique. The hole concentrations grown by periodically modulating Ga atoms and Mg dopants were over ∼1.5×1019 cm-3.

Published in:

Applied Physics Letters  (Volume:93 ,  Issue: 17 )

Date of Publication:

Oct 2008

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