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Reproducible growth of p-type ZnO:N using a modified atomic layer deposition process combined with dark annealing

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3 Author(s)
Dunlop, L. ; Department of Materials Science, University of Cambridge, Pembroke St., Cambridge CB2 3QZ, United Kingdom ; Kursumovic, A. ; MacManus-Driscoll, J.L.

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Nitrogen doped ZnO (ZnO:N) films were deposited by atmospheric atomic layer deposition (ALD) between 100 and 300 °C. Postannealing was required to remove compensating defects. After a low temperature dark annealing, originally n-type films became p-type. Films deposited at low temperatures (≤150 °C) have low hole mobilities (μ) of 0.2–0.4 cm2 V-1 s-1 and moderate hole concentrations (np) of around 1×1015 cm-3. Higher temperature deposited films (≥200 °C) have higher μ values (6 cm2 V-1 s-1) but np values ≪1×1013 cm-3. This crossover in transport properties can be explained by the opposing effects of deposition temperature on nitrogen doping level and distribution, and film crystallinity.

Published in:

Applied Physics Letters  (Volume:93 ,  Issue: 17 )