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Browse Journals & Magazines > Applied Physics Letters ...> Volume:93 Issue:17 Help

Gate-field-induced phase transitions in VO2: Monoclinic metal phase separation and switchable infrared reflections

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4 Author(s)
Chen, Changhong ; Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, People’s Republic of China ; Wang, Renfan ; Shang, Lang ; Guo, Chongfeng

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In a metal-oxide-semiconductor VO2 active layer under uniaxial stress, gate-field-induced phase transitions are revealed by strongly field-dependent Raman scattering and infrared reflections. A metal-insulator transition (MIT) is demonstrated by a strongly correlated monoclinic metal phase separation that percolates, thereby making the reflections switchable. In addition, the MIT occurs at a gate voltage around 3.36 V, much lower than the threshold of a structural phase transition (SPT). Hence, the MIT is easily controlled by the gate field to avoid the SPT-caused fatigue and breakdown in high-speed operation.

Published in:
Applied Physics Letters  (Volume:93 ,  Issue: 17 )

Date of Publication: Oct 2008

Page(s):
171101 - 171101-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.3009569
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Oct 2008

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