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Anisotropic in-plane strains in nonpolar AlN and AlGaN (1120) films grown on SiC (1120) substrates

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3 Author(s)
Akasaka, Tetsuya ; NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan ; Kobayashi, Yasuyuki ; Kasu, M.

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Nonpolar Al1-xGaxN (0≤x≤0.196) (1120) films were grown on 4H-SiC (1120) substrates by metal organic vapor phase epitaxy. Al1-xGaxN (0≤x≤0.057) films grew almost pseudomorphically on the substrates due to balanced in-plane stresses along [0001] and [1100], while Al1-xGaxN (0.057≪x) films were strained along [0001] but partially relaxed along [1100] due to the absence of the balance. The crystal tilts of the films toward [0001] decreased monotonically with increasing Ga composition due to the correspondence between the (0001) plane distances of the films and the (0002) plane distance of substrates and due to a decrease in the in-plane strain along [0001].

Published in:

Applied Physics Letters  (Volume:93 ,  Issue: 16 )