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Effect of rapid thermal annealing on optical and interfacial properties of atomic-layer-deposited Lu2O3 films on Si (100)

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6 Author(s)
Lu, H.L. ; State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, People’s Republic of China ; Scarel, G. ; Lamagna, L. ; Fanciulli, M.
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Lu2O3 films have been grown on Si(100) by atomic layer deposition using Lu(iPrO)3 (iPrO=OCH(CH3)2) and H2O. Optical properties and surface/interface evolution of the Lu2O3/Si system during rapid thermal annealing process have been studied using spectroscopic ellipsometry. The refractive index at 632.8 nm and optical band gap for as-deposited sample are determined to be 1.88 and 4.88 eV, respectively. It is revealed that interfacial Lu-silicate growth upon annealing is the dominant factor affecting the refractive index and optical band gap of Lu2O3 films. For all samples, the surface roughness decreases with increasing annealing temperature.

Published in:

Applied Physics Letters  (Volume:93 ,  Issue: 15 )

Date of Publication:

Oct 2008

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