By Topic

Epitaxial growth of MgO and Fe/MgO/Fe magnetic tunnel junctions on (100)-Si by molecular beam epitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Miao, G.X. ; Francis Bitter Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA ; Chang, J.Y. ; van Veenhuizen, M.J. ; Thiel, K.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2999633 

Epitaxial growth of MgO barrier on Si is of technological importance due to the symmetry filtering effect of the MgO barrier in conjunction with bcc-ferromagnets. We study the epitaxial growth of MgO on (100)-Si by molecular beam epitaxy. MgO matches Si with 4:3 cell ratio, which renders Fe to be 45° rotated relative to Si, in sharp contrast to the direct epitaxial growth of Fe on Si. The compressive strains from Si lead to the formation of small angle grain boundaries in MgO below 5 nm, and also affect the transport characteristics of Fe/MgO/Fe magnetic tunnel junctions formed on top.

Published in:

Applied Physics Letters  (Volume:93 ,  Issue: 14 )