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Transparent Al–Zn–Sn–O thin film transistors prepared at low temperature

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11 Author(s)
Cho, Doo-Hee ; Transparent Electronics Team, ETRI, Daejeon 305-350, Republic of Korea ; Shinhyuk Yang ; Byun, Chunwon ; Jaeheon Shin
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We have fabricated transparent bottom gate thin film transistors (TFTs) using Al-doped zinc tin oxide (AZTO) as active layers. The AZTO active layer was deposited by rf magnetron sputtering at room temperature. The AZTO TFT showed good TFT performance without postannealing. The field effect mobility and the subthreshold swing were improved by postannealing below 180 °C. The AZTO TFT exhibited a field effect mobility FET) of 10.1 cm2/Vs, a turn-on voltage (Von) of 0.4 V, a subthreshold swing (S/S) of 0.6 V/decade, and an on/off ratio (Ion/Ioff) of 109.

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Applied Physics Letters  (Volume:93 ,  Issue: 14 )