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Browse Journals & Magazines > Applied Physics Letters ...> Volume:93 Issue:14 Help

Transparent Al–Zn–Sn–O thin film transistors prepared at low temperature

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11 Author(s)
Cho, Doo-Hee ; Transparent Electronics Team, ETRI, Daejeon 305-350, Republic of Korea ; Shinhyuk Yang ; Byun, Chunwon ; Jaeheon Shin
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2998612 

We have fabricated transparent bottom gate thin film transistors (TFTs) using Al-doped zinc tin oxide (AZTO) as active layers. The AZTO active layer was deposited by rf magnetron sputtering at room temperature. The AZTO TFT showed good TFT performance without postannealing. The field effect mobility and the subthreshold swing were improved by postannealing below 180 °C. The AZTO TFT exhibited a field effect mobility (μFET) of 10.1 cm2/V s, a turn-on voltage (Von) of 0.4 V, a subthreshold swing (S/S) of 0.6 V/decade, and an on/off ratio (Ion/Ioff) of 109.

Published in:
Applied Physics Letters  (Volume:93 ,  Issue: 14 )

Date of Publication: Oct 2008

Page(s):
142111 - 142111-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2998612
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Oct 2008

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