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High mobility HfO2-based In0.53Ga0.47As n-channel metal-oxide-semiconductor field effect transistors using a germanium interfacial passivation layer

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14 Author(s)
Kim, Hyoung-Sub ; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas, Austin, Texas 78758, USA ; Ok, Injo ; Zhu, Feng ; Zhang, M.
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The electrical characteristics of HfO2-based n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) and metal-oxide-semiconductor capacitors (MOSCAPs) on high indium content In0.53Ga0.47As channel layers are presented. N-channel MOSFETs with a germanium (Ge) interfacial passivation layer (IPL) show maximum mobility 3186 cm2/Vs from split capacitance-voltage (C-V) method and the normalized drain current (to the channel length of 1 μm) of 753 mA/mm at Vg=Vth+2 V and Vd=2 V. On the contrary, MOSFETs without a Ge IPL or with high temperature post-metal annealing (PMA) exhibit inferior characteristics. MOSCAPs on n-type In0.53Ga0.47As layers demonstrate excellent C-V characteristics including low C-V frequency dispersion and low dielectric leakage current.

Published in:

Applied Physics Letters  (Volume:93 ,  Issue: 13 )

Date of Publication:

Sep 2008

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