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Fabrication and microstructure of p-type transparent conducting CuS thin film and its application in dye-sensitized solar cell

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7 Author(s)
Yuan, K.D. ; State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China ; Wu, J.J. ; Liu, M.L. ; Zhang, L.L.
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By reducing film thickness to a few nanometers, the narrow-band-gap CuS turns highly transparent. Surface modification by a self-assembled monolayer is the key factor to obtain a thin, dense, and continuous film. The film growth mechanism is identified as “layer-by-layer growth followed by islanding.” After annealing, a p-type conductivity of ∼2×103 S cm-1 is achieved at room temperature, and the thinnest conductive film has an average transparency of 92% between 400 and 800 nm. Using p-type CuS films as front contact layers, a dye-sensitized solar cell was fabricated with a significant photoelectric response.

Published in:

Applied Physics Letters  (Volume:93 ,  Issue: 13 )

Date of Publication:

Sep 2008

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