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Suppression of the subband parasitic peak by 1 nm i-AlN interlayer in AlGaN deep ultraviolet light-emitting diodes

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6 Author(s)
Zhang, J.C. ; Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan ; Zhu, Y.H. ; Egawa, T. ; Sumiya, S.
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The origin and suppression of the subband parasitic peak in AlGaN deep ultraviolet light-emitting diodes have been studied. The parasitic peak is clarified to come from a p-AlGaN cladding layer and to be related to Mg dopants. By using 1 nm i-AlN as an interlayer between the active region and the p-AlGaN cladding layer, this peak is suppressed efficiently. The devices with such an interlayer show improved output power by a factor of 4 at injection current density of 20 A/cm2, except that the series resistance and turn-on voltage are slightly increased.

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Applied Physics Letters  (Volume:93 ,  Issue: 13 )