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Erratum: “Optical properties of nearly stacking-fault-free m-plane GaN homoepitaxial films grown by metal organic vapor phase epitaxy on low defect density free-standing GaN substrates” [Appl. Phys. Lett. 92, 091912 (2008)]

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6 Author(s)
Chichibu, S.F. ; Center for Advanced Nitride Technology (CANTech), Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, Sendai 980-8577, Japan ; Yamaguchi, H. ; Zhao, L. ; Kubota, M.
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Applied Physics Letters  (Volume:93 ,  Issue: 12 )