Close category search window
 

Plasmon enhancement of bulk heterojunction organic photovoltaic devices by electrode modification

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Chen, Xiaohong ; Department of Chemistry, University of Rochester, Rochester, New York 14627, USA ; Zhao, Chunchang ; Rothberg, Lewis ; Ng, Man-Kit

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2988190 

The efficiency of photovoltaic devices fabricated from blends of regioregular poly(3-hexylthiophene) and {6,6}-phenyl C61-butyric acid methylester was improved by introducing a thin Au layer and LiF spacer prior to evaporation of Al contacts onto the polymer blend. Using an optimized Au/LiF/Al electrode gave a 20%–30% improved power efficiency over devices with only LiF/Al for AM1.5 irradiation. The increased efficiency is primarily due to the increased photocurrent, and we present spectroscopic data suggesting that this can be ascribed to plasmon enhancement of the polymer absorption by nanotextured Au.

Published in:
Applied Physics Letters  (Volume:93 ,  Issue: 12 )

Date of Publication: Sep 2008

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.