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Interband and intersubband optical characterization of semipolar (1122)-oriented GaN/AlN multiple-quantum-well structures

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9 Author(s)
Lahourcade, L. ; CEA-CNRS group “Nanophysique et semiconducteurs,” INAC/SP2M/NPSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France ; Kandaswamy, P.K. ; Renard, J. ; Ruterana, P.
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We report on semipolar GaN/AlN multiple-quantum-well structures grown on m-plane sapphire by plasma-assisted molecular-beam epitaxy. Optical investigation confirms a significant reduction in the quantum-confined Stark effect, in agreement with theoretical calculations, which predict an internal electric field between 0.6 and -0.55 MV/cm in the quantum wells, depending on the strain state. With respect to polar materials, the reduction in the internal electric field results in a substantial redshift of the intersubband energy.

Published in:

Applied Physics Letters  (Volume:93 ,  Issue: 11 )

Date of Publication:

Sep 2008

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