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High density patterned quantum dot arrays fabricated by electron beam lithography and wet chemical etching

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2 Author(s)
Verma, V.B. ; Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, 208 N. Wright Street, Urbana, Illinois 61801, USA ; Coleman, J.J.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2981207 

We present a quantum dot (QD) fabrication method which allows for the definition of the explicit location and size of an individual QD. We have obtained high optical quality, high density QD arrays utilizing hydrogen silsesquioxane, a negative tone electron beam resist, as a wet etch mask for an underlying quantum well. Linewidths as small as 24 meV from a large ensemble of QDs have been demonstrated in photoluminescence measurements at 77 K. The magnitude of the experimentally obtained blueshift due to quantum confinement effects is found to be consistent with that predicted by theory.

Published in:

Applied Physics Letters  (Volume:93 ,  Issue: 11 )

Date of Publication:

Sep 2008

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