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Influence of polar distribution on piezoelectric response of aluminum nitride thin films

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3 Author(s)
Kamohara, Toshihiro ; Measurement Solution Research Center, National Institute of Advanced Industrial Science and Technology (AIST) 807-1, Shuku, Tosu, Saga 841-0052, Japan ; Akiyama, M. ; Kuwano, Noriyuki

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The authors have investigated the influence of the crystal orientation and the polar distribution on the piezoelectric response of aluminum nitride (AlN) thin films prepared on Si, Mo/Si, and Mo/AlN-interlayer (IL)/Si substrates with increasing sputtering power. The crystal orientation of films prepared on Si improves with increasing sputtering power. On the other hand, the crystal orientation of films prepared on Mo/Si and Mo/AlN-IL/Si hardly changes. However, the piezoelectric response of all the films drastically changes from negative to positive values and the predominant polarity changes from N polarity to Al polarity. We found the proportional relationship between the polar distribution and piezoelectric response.

Published in:

Applied Physics Letters  (Volume:92 ,  Issue: 9 )