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X-ray photoelectron spectroscopy studies of nitridation on 4H-SiC (0001) surface by direct nitrogen atomic source

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6 Author(s)
Chai, J.W. ; Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602 ; Pan, J.S. ; Zhang, Z. ; Wang, S.J.
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A Si3N4 passivation layer has been successfully grown on the 4H-SiC (0001) surface by direct atomic source nitridation at various substrate temperatures. In situ x-ray photoelectron spectroscopy measurements show that higher substrate temperature leads to higher nitridation rate and good crystallinity of the passivation layer. A thin oxynitride layer on the top of the Si3N4 was observed due to the residual O in the vacuum system, but was decomposed during annealing. In the meantime, excess C was found to be effectively removed by the reactive atomic N source.

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Applied Physics Letters  (Volume:92 ,  Issue: 9 )