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Electrically injected InAs/GaAs quantum dot spin laser operating at 200 K

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6 Author(s)
Basu, D. ; Solid-State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Avenue, Ann Arbor, Michigan 48109-2122, USA ; Saha, D. ; Wu, C.C. ; Holub, M.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2883953 

A spin-polarized vertical cavity surface emitting laser, with InAs/GaAs self-organized quantum dots as the active gain media, has been fabricated and characterized. Electron spin injection is achieved via a MnAs/GaAs Schottky tunnel contact. The laser is operated at 200 K and, at this temperature, the degree of circular polarization in the output is 8% and the maximum threshold current reduction is 14%. These effects are not observed in identical control devices with nonmagnetic contacts.

Published in:

Applied Physics Letters  (Volume:92 ,  Issue: 9 )

Date of Publication:

Mar 2008

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