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Phosphor-free white light-emitting diode with laterally distributed multiple quantum wells

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6 Author(s)
Park, Il-Kyu ; Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea ; Kim, Ja-Yeon ; Kwon, Min-Ki ; Cho, Chu-Young
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2890492 

A phosphor-free white light-emitting diode (LED) was fabricated with laterally distributed blue and green InGaN/GaN multiple quantum wells (MQWs) grown by a selective area growth method. Photoluminescence and electroluminescence (EL) spectra of the LED showed emission peaks corresponding to the individual blue and green MQWs. The integrated EL intensity ratio of green to blue emission varied from 2.5 to 6.5 with the injection current below 300 mA, but remained constant at high injection currents above 300 mA. The stability of the emission color at high currents is attributed to parallel carrier injection into both MQWs.

Published in:

Applied Physics Letters  (Volume:92 ,  Issue: 9 )

Date of Publication:

Mar 2008

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