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ZnO epitaxy on (111) Si using epitaxial Lu2O3 buffer layers

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7 Author(s)
Guo, W. ; Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136, USA ; Allenic, A. ; Chen, Y.B. ; Pan, X.Q.
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We report the growth and characterization of single-crystalline, crack-free, epitaxial (0001) ZnO films on (111) Si substrates using intervening epitaxial Lu2O3 buffer layers. The epitaxial orientation relationships are (0001)ZnO||(111)Lu2O3||(111)Si and [1210]ZnO||[110]Lu2O3||[110]Si. X-ray diffraction and transmission electron microscopy reveal that the ZnO films have high structural quality and an atomically sharp ZnO/Lu2O3 interface. Temperature-dependent photoluminescence measurements show optical properties comparable to ZnO single crystals. The films have a resistivity of 0.31 Ω cm, an electron concentration of 2.5×1017 cm-3, and a mobility of 80 cm2/Vs at room temperature. The epitaxial growth of ZnO on Si represents a significant step toward the integration of ZnO-based multifunctional devices with Si electronics.

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Applied Physics Letters  (Volume:92 ,  Issue: 7 )