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Browse Journals & Magazines > Applied Physics Letters ...> Volume:92 Issue:6 Help

Suppression of exciton annihilation at high current densities in organic light-emitting diode resulting from energy-level alignments of carrier transport layers

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2 Author(s)
Matsushima, Toshinori ; Core Research for Evolutional Science and Technology Program, Japan Science and Technology Agency, 1-32-12 Higashi, Shibuya, Tokyo 150-0011, Japan and Center for Future Chemistry, Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395, Japan ; Adachi, C.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2844891 

We manufactured an organic light-emitting diode (OLED) in which the hole and electron transport layers are chemically doped with p- and n-type dopants and energy levels in between neighboring carrier transport layers and emitting molecules are aligned. From the results of the electroluminescence (EL) characteristics of the OLED, we found that (1) the OLED has an extremely low driving voltage of 2.65±0.05 0.05 V at a current density of 100 mA/cm2; (2) the onset voltage of EL (≈2.4 V) corresponds to the photon energy of emitting molecules (≈2.5 eV), while the onset voltage of currents is ≈1.8 V; and (3) a decrease in EL efficiency at high current densities can be suppressed by matching the energy levels.

Published in:
Applied Physics Letters  (Volume:92 ,  Issue: 6 )

Date of Publication: Feb 2008

Page(s):
063306 - 063306-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2844891
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Feb 2008

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