Scheduled System Maintenance on December 17th, 2014:
IEEE Xplore will be upgraded between 2:00 and 5:00 PM EST (18:00 - 21:00) UTC. During this time there may be intermittent impact on performance. We apologize for any inconvenience.
By Topic

Low noise and high tolerance to radiation effects of complementary bipolar SOI IC technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Pawlikiewicz, A.H. ; United Technol. Microelectron. Center, Colorado Springs, CO, USA ; Bishop, A. ; Jerome, R.

The 1/f noise performance of Advanced Complementary Bipolar Process from United Technologies (ACUTE) is presented as a function of a total dose, device geometry and polarity as well as bias condition during irradiation. The data shows a significant radiation tolerance and superior low noise as compared with a standard bipolar processes

Published in:

Radiation Effects Data Workshop, 1995, NSREC '95 Workshop Record., 1995 IEEE

Date of Conference:

19 Jul 1995