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High quality InAsSb grown on InP substrates using AlSb/AlAsSb buffer layers

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3 Author(s)
Bing-Ruey Wu ; Department of Electrical and Computer Engineering, University of Illinois, Urbana-Champaign, Urbana, Illinois 61801, USA ; Liao, Chichih ; Cheng, K.Y.

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High quality InAsSb grown on semi-insulating InP substrates by molecular beam epitaxy was achieved using AlSb/AlAsSb structure as the buffer layer. A 1000 Å InAsSb layer grown on top of 1 μm AlSb/AlAsSb buffer layer showed a room temperature electron mobility of ∼12 000 cm2/V s. High structural quality and low misfit defect density were also demonstrated in the InAsSb layer. This novel AlSb/AlAsSb buffer layer structure with the AlAsSb layer lattice matched to InP substrates could enhance the performance of optoelectronic devices utilizing 6.1 Å family of compound semiconductor alloys.

Published in:

Applied Physics Letters  (Volume:92 ,  Issue: 6 )