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Ferroelectric properties of Bi4-xCexTi3O12 (0≪x≪4) thin film array fabricated from Bi2O3/CeO2/TiO2 multilayers using multitarget sputtering

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6 Author(s)
Kim, Ki Woong ; Department of Chemical and Biomolecular Engineering (BK21 Graduate Program) and Center for Ultramicrochemical Process Systems (CUPS), Korea Advanced Institute of Science and Technology (KAIST), 373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701, Republic of Korea ; Kim, Tai Suk ; Jeon, Min Ku ; Oh, Kwang Seok
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We fabricated a ferroelectric Bi4-xCexTi3O12 thin film library by solid-state mixing of Bi2O3/CeO2/TiO2 multilayers using a multitarget rf magnetron sputtering equipped with an automated shutter. Polarization-electrical field and the structure are mapped as a function of Ce content (x) from 0 to 4. The remnant polarization decreases as Ce content increases, and at x≥0.8, Bi4-xCexTi3O12 samples exhibit a paraelectric property due to the formation of impurity phases such as Bi2Ti2O7 and CeO2. Among the thin film samples of the library, Bi3.85Ce0.15Ti3O12 exhibited the largest remnant polarization of 13.0 μC/cm2.

Published in:

Applied Physics Letters  (Volume:92 ,  Issue: 5 )