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Experimental evidence of ballistic transport in cylindrical gate-all-around twin silicon nanowire metal-oxide-semiconductor field-effect transistors

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12 Author(s)
Cho, K.H. ; Advanced Technology Development Team 1, R&D Center, Samsung Electronics Co., San 24, Nongseo-Dong, Giheung-Gu, Yongin-City, Gyeonggi-Do, 446-711 Republic of Korea ; Yeo, K.H. ; Yeoh, Y.Y. ; Suk, S.D.
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We have investigated the electrical characteristics of cylindrical gate-all-around twin silicon nanowire metal-oxide-semiconductor field effect-transistors with 4 nm radius and the gate length ranging from 22 to 408 nm. We observed strong transconductance overshoot in the linear source-drain bias regime in the devices with channel length shorter than 46 nm. The mean free path estimated from the slope of the zero-field one dimensional ballistic resistance measured as a function of device length was almost the same as this length.

Published in:

Applied Physics Letters  (Volume:92 ,  Issue: 5 )